Does thermal annealing make zirconia film sub-stoichiometric?

The extracted zirconia film stoichi-ometry (i.e., O to Zr atomic fraction) based on core level peak areas is determined to be 2.0 and 1.8 for the film before and after annealing, respectively, implying that the thermal annealing process makes the film slightly sub-stoichiometric.

How does zirconium tetrachloride (zrcl 4) affect cspbi 2 BR?

Herein, zirconium tetrachloride (ZrCl 4) was doped into CsPbI 2 Br films to modulate the crystal growth and improve the film quality. The partial substitution of the B-site Pb 2+ of CsPbI 2 Br with Zr 4+ suppresses the unwanted phase conversion from the crystallized black α-phase to the δ-phase, resulting in improved phase stability.

Why are c-Si solar cells so popular?

Crystalline silicon (c-Si) solar cells remain the most suc-cessful photovoltaic technology due to a combination of high power conversion efficiency and low manufacturing cost. One of the key enablers in achieving high performance has been the passivation of the dangling bonds usually present on the silicon wafer surfaces.

Is cspbi 2 Br a good choice for tandem solar cells?

All-inorganic wide-bandgap perovskite CsPbI 2 Br has attracted much attention because of its inherent thermal stability and ideal bandgap for the front subcell of tandem solar cells (TSCs). However, the low power conversion efficiency (PCE) and poor moisture stability of CsPbI 2 Br still restrict its future commercialization.

What is a silicon-based antireflection film for solar cells?

A silicon-based antireflection film for solar cells that combines reduced reflectivity with improved performance against photoinduced degradation (PID).

What are the benefits of zrcl 4 -doped cspbi 2 BR perovskite solar?

Additionally, the incorporation of ZrCl 4 suppresses nonradiative recombination and forms a matched energy-level alignment with the hole-transport layer (Spiro-OMeTAD). Benefiting from these features, the ZrCl 4 -doped CsPbI 2 Br perovskite solar cell (PSC) shows an outstanding efficiency of 16.60% with a high open-circuit voltage of 1.29 V.